<?xml version="1.0" encoding="utf-8" ?> <rss version="2.0" xmlns:opensearch="http://a9.com/-/spec/opensearch/1.1/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:atom="http://www.w3.org/2005/Atom"> <channel> <title> <![CDATA[National Library of Nigeria Search for 'su:&quot;Semiconductor&quot;']]> </title> <!-- prettier-ignore-start --> <link> /cgi-bin/koha/opac-search.pl?q=ccl=su%3A%22Semiconductor%22&#38;sort_by=relevance&#38;format=rss </link> <!-- prettier-ignore-end --> <atom:link rel="self" type="application/rss+xml" href="/cgi-bin/koha/opac-search.pl?q=ccl=su%3A%22Semiconductor%22&#38;sort_by=relevance&#38;format=rss" /> <description> <![CDATA[ Search results for 'su:&quot;Semiconductor&quot;' at National Library of Nigeria]]> </description> <opensearch:totalResults>2</opensearch:totalResults> <opensearch:startIndex>0</opensearch:startIndex> <opensearch:itemsPerPage>50</opensearch:itemsPerPage> <atom:link rel="search" type="application/opensearchdescription+xml" href="/cgi-bin/koha/opac-search.pl?q=ccl=su%3A%22Semiconductor%22&#38;sort_by=relevance&#38;format=opensearchdescription" /> <opensearch:Query role="request" searchTerms="q%3Dccl%3Dsu%253A%2522Semiconductor%2522" startPage="" /> <item> <title> FINFETS and other multi-gate transistors / </title> <dc:identifier>ISBN:9780387717517 </dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=9284</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <img src="https://images-na.ssl-images-amazon.com/images/P/038771751X.01.TZZZZZZZ.jpg" alt="" /> ]]> <![CDATA[ <p> New York, U.S.A : Springer, 2008 .<br /> xiii, 339p. : 9780387717517 </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=9284">Place hold on <em>FINFETS and other multi-gate transistors /</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=9284</guid> </item> <item> <title> Principles of semiconductor devices / </title> <dc:identifier>ISBN:9780195394603</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=12207</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <img src="https://images-na.ssl-images-amazon.com/images/P/0195394607.01.TZZZZZZZ.jpg" alt="" /> ]]> <![CDATA[ <p> By DIMITRIJEV, Sima.<br /> New York, U. S. A. : Oxford University Press, 2010 .<br /> xviii, 588p. : , Bibliography : P. 571-572 9780195394603 </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=12207">Place hold on <em>Principles of semiconductor devices /</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=12207</guid> </item> </channel> </rss>
